? 2013 ixys all rights reserved 1 - 4 20130813g mdd 312 ixys reserves the right to change limits, test conditions and dimensions. i frms = 2x 520 a i favm = 2x 310 a v rrm = 1200-2200 v high power diode modules features ? international standard package ? direct copper bonded al 2 o 3 ceramic with copper base plate ? planar passivated chips ? isolation voltage 3600 v~ ? ul registered applications ? supplies for dc power equipment ? dc supply for pwm inverter ? field supply for dc motors ? battery dc power supplies advantages ? simple mounting ? improved temperature & power cycling ? reduced protection circuits symbol conditions maximum ratings i frms i favm t vj = t vjm t c = 25c 180 sine t c = 100c 520 310 a a i fsm t vj = 45c; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 10500 11200 a a t vj = t vjm ; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 9200 9800 a a i 2 t t vj = 45c; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 551 000 527 000 a 2 s a 2 s t vj = t vjm ; t = 10 ms (50 hz) v r = 0 t = 8.3 ms (60 hz) 423 000 403 000 a 2 s a 2 s t vj t vjm t stg -40...+150 150 -40...+125 c c c v isol 50/60 hz, rms t = 1 min i isol < 1 ma t = 1 s 3000 3600 v~ v~ m d mounting torque (m6) terminal connection torque (m8) 4.5 - 7 11-13 nm nm weight typical including screws 750 g 3 1 2 v rsm v rrm type v v 1300 1200 mdd 312-12n1 1500 1400 mdd 312-14n1 1700 1600 mdd 312-16n1 1900 1800 mdd 312-18n1 2100 2000 mdd 312-20n1 2300 2200 mdd 312-22n1 symbol conditions characteristics values i rrm v r = v rrm t vj = t vjm 30 ma v f i f = 600 a; t vj = 25c 1.32 v v t0 r t for power-loss calculations only t vj = t vjm 0.8 0.6 v mw r thjc r thjk per diode; dc current per module other values per diode; dc current see mcc 255 per module 0.12 0.06 0.16 0.08 k/w k/w k/w k/w q s i rm i f = 400 a; -di/dt = 50 a/s; t vj = 125c 700 260 c a d s d a a creeping distance on surface creepage distance in air maximum allowable acceleration 12.7 9.6 50 mm mm m/s 2 data according to iec 60747 and refer to a single diode unless otherwise stated. e72873
? 2013 ixys all rights reserved 2 - 4 20130813g mdd 312 ixys reserves the right to change limits, test conditions and dimensions. optional accessories for modules keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red t ype z y 180 l ( l = left for pin pair 4/5) t ype z y 180r (r = right for pin pair 6/7) 2.8 x 0.8 sw 13 m8 x 20 10 2 49 45 43 1 2 3 7 6 5 4 80 92 1 15 6.2 20 22.5 35 28.5 50 38 18 ul 758, style 3751 52 +0 -1,4 32 +0 -1,9 dimensions in mm (1 mm = 0.0394)
? 2013 ixys all rights reserved 3 - 4 20130813g mdd 312 ixys reserves the right to change limits, test conditions and dimensions. 0 25 50 75 100 125 150 0 100 200 300 400 500 0 100 200 300 400 500 600 0 25 50 75 100 125 150 1 10 10 5 10 6 0.001 0.01 0.1 1 0 2000 4000 6000 8000 10000 0 100 200 300 400 500 600 0 250 500 750 1000 1250 1500 1750 t [s] 0 25 50 75 100 125 150 0 100 200 300 400 500 i fsm [a] r l 80 % v rrm t vj = 45c t vj = 150c 50 hz t vj = 150c v r = 0 v t vj = 45c 180 sin 120 60 30 dc 0.6 0.8 0.1 0.2 0.3 0.4 r thka k/w 0.06 2 x MDD312 circuit b2u 0.12 0.06 0.04 r thka k/w 0.5 0.08 0.2 0.3 50 150 0 100 200 100 300 500 0 200 400 600 50 150 0 100 200 0 5 10 15 20 25 t vj = 125c v r = 600 v t vj = 125c v r = 600 v i f = 400 a i f = 400 a t [ms] i 2 t [a 2 s] t c [c] i favm [a] i favm [a] t a [c] p tot [w] i rm [a] di f /dt [a/s] p tot [w] i davm [a] t a [c] t rr [s] di f /dt [a/s] 180 sin 120 60 30 dc fig. 1 surge overload current i fsm : crest value, t: duration fig. 2 i 2 t versus time (1-10 ms) fig. 3 maximum forward current at case temperature fig. 4 power dissipation vs. forward current & ambient temperature (per diode) fig. 5 typ. peak reverse current fig. 6 single phase rectifier bridge: po wer dissipation vs. direct output current and ambient temperature r = resistive load, l = inductive load fig. 7 typ. recovery time t rr versus -di f /dt
? 2013 ixys all rights reserved 4 - 4 20130813g mdd 312 ixys reserves the right to change limits, test conditions and dimensions. 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 0.25 z thjc [k/w] 0 25 50 75 100 125 150 0 200 400 600 800 0 500 1000 1500 2000 2500 3000 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 3 x MDD312 circuit b6u 0.3 0.2 0.15 0.1 0.06 0.03 0.4 r thka k/w dc 180 120 60 30 dc 30 60 120 180 i favm [a] t a [c] p tot [w] fig. 8 three phase rectifier bridge: power dissi pation vs. direct output current & ambient temperature t [s] t [s] z thjk [k/w] fig. 9 transient thermal impedance junction to case (per diode) fig. 10 transient thermal impedance junction to heatsink (per diode) r thjc for various conduction angles d : d r thjc (k/w) dc 0.120 180c 0.128 120c 0.135 60c 0.153 30c 0.185 constants for z thjc calculation: i r thi (k/w) t i (s) 1 0.0058 0.00054 2 0.031 0.098 3 0.072 0.54 4 0.0112 12 r thjk for various conduction angles d: d r thjk (k/w) dc 0.160 180c 0.168 120c 0.175 60c 0.193 30c 0.225 constants for z thjk calculation: i r thi (k/w) t i (s) 1 0.0058 0.00054 2 0.031 0.098 3 0.072 0.54 4 0.0112 12 5 0.04 12
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